technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com pnp silicon switching transistor qualified per mil-prf-19500/357 t4-lds-0156 rev. 2 (101452) page 1 of 5 devices levels 2n3634 2n3635 2n 3636 2N3637 jan 2n3634l 2n3635l 2n3636l 2N3637l jantx 2n3634ub 2n3635ub 2n3636ub 2N3637ub jantxv jans absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol 2n3634* 2n3635* 2n3636* 2N3637* unit collector-emitter voltage v ceo 140 175 vdc collector-base voltage v cbo 140 175 vdc emitter-base voltage v ebo 5.0 5.0 vdc collector current i c 1.0 1.0 adc total power dissipation ub: @ t a = +25c @ t c = +25c @ t c = +25c p t ** 1.0 5.0 1.5 w w w operating & storage junction temperature range t j , t stg -65 to +200 c * electrical characteristics for ?l? suffix devices are identical to the ?non l? corresponding devices. ** consult 19500/357 for de-rating curves. electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-emitter breakdown voltage v (br)ceo vdc i c = 10madc 2n3634, 2n3635 2n3636, 2N3637 140 175 collector-base cutoff current i cbo adc adc adc v cb = 100vdc v cb = 140vdc v cb = 175vdc 2n3634, 2n3635 2n3636, 2N3637 100 10 10 emitter-base cutoff current v eb = 3.0vdc v eb = 5.0vdc i ebo 50 10 adc adc collector-emitter cutoff current v ce = 100vdc i ceo 10 adc to-5* 2n3634l, 2n3635l 2n3636l, 2N3637l to-39* (to-205ad) 2n3634, 2n3635 2n3636, 2N3637 3 pin 2n3634ub, 2n3635ub 2n3636ub, 2N3637ub
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com t4-lds-0156 rev. 2 (101452) page 2 of 5 electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit on characteristics (1) forward-current transfer ratio h fe i c = 0.1madc, v ce = 10vdc i c = 1.0madc, v ce = 10vdc i c = 10madc, v ce = 10vdc i c = 50madc, v ce = 10vdc i c = 150madc, v ce = 10vdc 2n3634, 2n3636 25 45 50 50 30 150 i c = 0.1madc, v ce = 10vdc i c = 1.0madc, v ce = 10vdc i c = 10madc, v ce = 10vdc i c = 50madc, v ce = 10vdc i c = 150madc, v ce = 10vdc 2n3635, 2N3637 55 90 100 100 60 300 collector-emitter saturation voltage v ce(sat) vdc i c = 10madc, i b = 1.0madc i c = 50madc, i b = 5.0madc 0.3 0.6 base-emitter saturation voltage v be(sat) vdc i c = 10madc, i b = 1.0madc i c = 50madc, i b = 5.0madc 0.65 0.8 0.9 dynamic characteristics parameters / test conditions symbol min. max. unit forward current transfer ratio |h fe | i c = 30madc, v ce = 30vdc, f = 100mhz 2n3634, 2n3636 2n3635, 2N3637 1.5 2.0 8.0 8.5 forward current transfer ratio h fe i c = 10madc, v ce = 10vdc, f = 1.0khz 2n3634, 2n3636 2n3635, 2N3637 40 80 160 320 small-signal short-circuit input impedance h ie i c = 10madc, v ce = 10vdc, f = 1.0khz 2n3634, 2n3636 2n3635, 2N3637 100 200 600 1200 small-signal open-circuit input impedance h oe 200 s i c = 10madc, v ce = 10vdc, f = 1.0khz output capacitance c obo 10 pf v cb = 20vdc, i e = 0, 100 khz f 1.0mhz input capacitance c ibo 75 pf v eb = 1.0vdc, i c = 0, 100 khz f 1.0mhz noise figure v ce = 10vdc, i c = 0.5madc, r g = 1.0k f = 100hz f = 1.0khz f = 10khz nf 5.0 3.0 3.0 db (1) pulse test: pulse width = 300 s, duty cycle 2.0%
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com t4-lds-0156 rev. 2 (101452) page 3 of 5 safe operating area dc tests t c = 25c, 1 cycle, t = 1.0s test 1 v ce = 100vdc, i c = 30madc v ce = 130vdc, i c = 20madc 2n3634, 2n3635 2n3636, 2N3637 test 2 v ce = 50vdc, i c = 95madc test 3 v ce = 5.0vdc, i c = 1.0adc
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com t4-lds-0156 rev. 2 (101452) page 4 of 5 package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. beyond r maximum, tw must be held to a minimum length of .021 inch (0.53 mm). 4. tl measured from maximum hd. 5. cd shall not vary more than .010 inch (0.25 mm) in zone p. this zone is controlled for automatic handling. 6. leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at a maximum material condition (mmc) relative to the tab at mmc. the device may be measured by direct methods or by gauge and gauging procedure. 7. lu applies between l1 and l2. ld applies between l2 and l minimum. diameter is uncontrolled in l1 and beyond ll minimum. 8. r (radius) applies to both inside corners of tab. 9. for transistor types 2n3634 through 2N3637, ll is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum (to-39). 10. for transistor types 2n3634l through 2N3637l, ll is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum (to-5). 11. in accordance with asme y14.5m , diameters are equivalent to x symbology. figure 1: physical dimensions (to-5 and to-39) dimensions ltr inches millimeters notes min max min max cd .305 .335 7.75 8.51 ch .240 .260 6.10 6.60 hd .335 .370 8.51 9.40 lc .200 typ 5.08 typ 7 ld .016 .021 0.41 0.53 6 ll see notes 7, 9, and 10 lu .016 .019 0.41 0.48 7 l 1 050 1.27 7 l 2 .250 6.35 7 p .100 2.54 5 q .050 1.27 r .010 0.254 8 tl .029 .045 0.74 1.14 4 tw .028 .034 0.71 0.86 3 45 tp 45 tp 6 term 1 emitter term 2 base term 3 collector
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com t4-lds-0156 rev. 2 (101452) page 5 of 5 figure 2: physical dimensions, surface mount 2n3634ub through 2N3637ub (ub version) . notes: dimensions 1. dimensions are in inches. ltr inches millimeters notes 2. millimeters are given for general information only. min max min max 3. hatched areas on package denote metallized areas. bh .046 .056 1.17 1.42 4. pad 1 = base, pad 2 = emitter, pad 3 = collector, pad 4 = bl .115 .128 2.92 3.25 shielding connected to the lid. bw .085 .108 2.16 2.74 5. in accordance with asme y14.5m, diameters are. cl .128 3.25 equivalent to x symbology cw .108 2.74 ll 1 .022 .038 0.56 0.96 ll 2 .017 .035 0.43 0.89 ls 1 .036 .040 0.91 1.02 ls 2 .071 .079 1.81 2.01 lw .016 .024 0.41 0.61 r .008 .203 r 1 .012 .305 r 2 .022 .559
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